ldm - 0808 series technical data c - mount / to -3 high power infrared laser diode specifications (25c) type ldm - 0808 - 300m - x1 ldm - 0808 - 500m - x2 ldm - 0808 - 001w - x3 cw output power (w) 0.3 0.5 1.0 peak wavelength (nm) ral width ? (nm) 2.5 2.5 2.5 0.10 0.13 0.24 0.40 0.60 1.24 2.0 2.0 2.0 0.95 1.0 1.0 beam divergence U series resistance () 1.0 0.60 0.30 type ldm - 0808 - 002w - x3 ldm - 0808 - 003w - x3 ldm - 0808 - 005w - x5 cw output power (w) 2.0 3.0 5.0 peak wavelength (nm) spectral width ? (nm) 2.5 2.5 2.5 0.50 0.55 1.1 2. 3.1 5.3 2.0 2.1 2.5 1.0 1.1 1.1 beam divergence U ries resistance () 0.25 0.2 0.10 features ? cw output power: 0.3 w, 0.5 w, 1.0 w, 2.0 w, 3.0 w, 5.0 w ? variety of emitting area ? high - efficiency quantum well structure ? package: to package or c - mount applications ? solid - state lase r pumping ? medical usage ? target designator ? free - space communication ? infrared light sources
package dimensons to - 3 package ( unit:mm ) c - mount ( unit:mm )
typical performance curves notes 1. high power laser diodes are high energy laser devices. it is harmful to human body and health. never look directly into the laser output port. 2. high power laser dio des could operate in forward voltage. the reverse current and voltage should not be higher than 25a and 3v, respectively. 3. heavy humidity can get dew on the ld then damage the ld. 4. the generated heat must be removed in time when the ld working. 5. the high tem perature will effect the performance of the products. the lifetime can also be shortened by high temperature. 6. the operating current and optical power of laser must not be higher than the given rate current and power. the excessive current would accelerate aging and shorten lifetime, even damage the ld. 7. the semiconductor laser diode is a sensitive electronic device. please observe precaution for handling electrostatitic sensitive devices.
aging data
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